Discrete Semiconductor Products

CSD18513Q5A

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40-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 3.4 MOHM

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Discrete Semiconductor Products

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40-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 3.4 MOHM

Technical Specifications

Parameters and characteristics for this part

Specification	CSD18513Q5A

Current - Continuous Drain (Id) @ 25°C	124 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	61 nC
Input Capacitance (Ciss) (Max) @ Vds	4280 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	96 W
Rds On (Max) @ Id, Vgs	5.3 mOhm
Supplier Device Package	8-VSONP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm

Part	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	FET Type
Texas Instruments CSD18513Q5A	20 V	2.4 V	8-VSONP (5x6)	8-PowerTDFN	MOSFET (Metal Oxide)	5.3 mOhm	40 V	124 A	4280 pF	-55 °C	150 °C	4.5 V 10 V	96 W	61 nC	Surface Mount	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 40-V, 2.8-mΩ, 5-mm × 6-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Technical documentation and resources