Discrete Semiconductor Products

SQJ476EP-T1_GE3

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N-CHANNEL 100-V (D-S) 175C MOSFET

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Discrete Semiconductor Products

Active

N-CHANNEL 100-V (D-S) 175C MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ476EP-T1_GE3

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	45 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	38 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Qualification	Vgs (Max)	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Grade	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [x]	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SQJ476EP-T1_GE3	AEC-Q101	20 V	PowerPAK® SO-8	PowerPAK® SO-8	38 mOhm	N-Channel	Surface Mount	45 W	4.5 V 10 V	Automotive	700 pF	-55 °C	175 ░C	100 V	20 nC	2.5 V	MOSFET (Metal Oxide)	23 A

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General part information

N-Channel 100 V 23A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources