Discrete Semiconductor Products

SFA808G

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DIODE GEN PURP 600V 8A TO220AC

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 8A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	SFA808G

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	35 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Supplier Device Package	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case	Technology	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Mounting Type
Taiwan Semiconductor Corporation SFA808G	60 pF	35 ns	10 µA	TO-220AC	-55 °C	150 °C	TO-220-2	Standard	200 mA 500 ns	600 V	8 A	1.7 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 8A Through Hole TO-220AC

Technical documentation and resources