Discrete Semiconductor Products

FDC5612-G

Obsolete

MOSFET N-CH 60V SUPERSOT6

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V SUPERSOT6

Technical Specifications

Parameters and characteristics for this part

Specification	FDC5612-G

Current - Continuous Drain (Id) @ 25°C	4.3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds	650 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Rds On (Max) @ Id, Vgs	55 mOhm
Supplier Device Package	SuperSOT™-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDC5612_F095	4 V	6 V 10 V	SOT-23-6 Thin TSOT-23-6	60 V	20 V	MOSFET (Metal Oxide)	Surface Mount	18 nC	N-Channel	4.3 A	55 mOhm	SuperSOT™-6	-55 °C	150 °C	650 pF
ON Semiconductor FDC5612-G	4 V	6 V 10 V	SOT-23-6 Thin TSOT-23-6	60 V	20 V	MOSFET (Metal Oxide)	Surface Mount	18 nC	N-Channel	4.3 A	55 mOhm	SuperSOT™-6	-55 °C	150 °C	650 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 4.3A (Ta) 800mW (Ta) Surface Mount SuperSOT™-6

Technical documentation and resources

No documents available