
Discrete Semiconductor Products
DMN2991UT-7
ActiveDiodes Inc
20V 300MA 280MW 3Ω@4.5V,100MA 1V 1 N-CHANNEL SOT-523 MOSFETS ROHS
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Discrete Semiconductor Products
DMN2991UT-7
ActiveDiodes Inc
20V 300MA 280MW 3Ω@4.5V,100MA 1V 1 N-CHANNEL SOT-523 MOSFETS ROHS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2991UT-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 300 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 0.35 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 21.5 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-523 |
| Power Dissipation (Max) | 280 mW |
| Rds On (Max) @ Id, Vgs [Max] | 3 Ohm |
| Supplier Device Package | SOT-523 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 10 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DMN2991UDA Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources