
Integrated Circuits (ICs)
IS43DR86400E-25DBLI
ActiveISSI, Integrated Silicon Solution Inc
DRAM CHIP DDR2 SDRAM 512M-BIT 64MX8 1.8V 60-PIN TWBGA
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Integrated Circuits (ICs)
IS43DR86400E-25DBLI
ActiveISSI, Integrated Silicon Solution Inc
DRAM CHIP DDR2 SDRAM 512M-BIT 64MX8 1.8V 60-PIN TWBGA
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IS43DR86400E-25DBLI |
|---|---|
| Access Time | 400 ps |
| Clock Frequency | 400 MHz |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Memory Organization | 64 M |
| Memory Size | 64 MB |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 C |
| Operating Temperature [Min] | -40 ¯C |
| Package / Case | 60-TFBGA |
| Supplier Device Package | 60-TWBGA (8x10.5) |
| Technology | SDRAM - DDR2 |
| Voltage - Supply [Max] | 1.9 V |
| Voltage - Supply [Min] | 1.7 V |
| Write Cycle Time - Word, Page | 15 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 4.97 | |
| Tray | 242 | $ 4.87 | ||
Description
General part information
IS43DR86400 Series
Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Double data rate interface: two data transfers per clock cycle
Documents
Technical documentation and resources
No documents available