Discrete Semiconductor Products

2N5400G

Obsolete

TRANS GP BJT PNP 120V 0.6A 625MW 3-PIN TO-92 BULK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS GP BJT PNP 120V 0.6A 625MW 3-PIN TO-92 BULK

Technical Specifications

Parameters and characteristics for this part

Specification	2N5400G

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 hFE
Frequency - Transition	400 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Supplier Device Package	TO-226
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Transistor Type	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Supplier Device Package	Supplier Device Package
ON Semiconductor 2N5400_D26Z	TO-226-3 TO-92-3	-55 °C	150 °C	PNP	600 mA	40 hFE	625 mW	Through Hole	100 nA	500 mV	120 V	400 MHz	TO-92-3
ON Semiconductor 2N5400G	TO-226-3 TO-92-3 Long Body	-55 °C	150 °C	PNP	600 mA	40 hFE	625 mW	Through Hole	100 nA	500 mV	120 V	400 MHz	TO-92	TO-226
ON Semiconductor 2N5400_S00Z	TO-226-3 TO-92-3	-55 °C	150 °C	PNP	600 mA	40 hFE	625 mW	Through Hole	100 nA	500 mV	120 V	100 MHz	TO-92-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 120 V 600 mA 400MHz 625 mW Through Hole TO-92 (TO-226)

Technical documentation and resources