Discrete Semiconductor Products

1N5620

Unknown

DIODE GEN PURP 800V 2A AXIAL

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Discrete Semiconductor Products

Unknown

DIODE GEN PURP 800V 2A AXIAL

Technical Specifications

Parameters and characteristics for this part

Specification	1N5620

Capacitance @ Vr, F	23 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	500 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Axial
Reverse Recovery Time (trr)	2 µs
Speed [Min]	200 mA, 500 ns
Supplier Device Package	Axial
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Package / Case	Speed [Min]	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Capacitance @ Vr, F	Reverse Recovery Time (trr)
Semtech Corporation JANTXV1N5620
Semtech Corporation 1N5620	Axial	200 mA 500 ns	Axial	175 ░C	-65 C	Standard	800 V	Through Hole	1.1 V	500 nA	2 A	23 pF	2 µs

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 2A Through Hole Axial

Technical documentation and resources

No documents available