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SCT3160KW7HRTL

Discrete Semiconductor Products

SCT3160KW7HRTL

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Rohm Semiconductor

1200V, 17A, 7-PIN SMD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN Power Eco Family: Overview of ROHM's Power Semiconductor Lineup +64

SCT3160KW7HRTL

Discrete Semiconductor Products

SCT3160KW7HRTL

Active

Rohm Semiconductor

1200V, 17A, 7-PIN SMD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Power Eco Family: Overview of ROHM's Power Semiconductor Lineup +64

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT3160KW7HRTL

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	1.2 kV
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	42 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	398 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	208 mOhm
Supplier Device Package	TO-263-7L
Vgs(th) (Max) @ Id	5.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1590	$ 8.30
Newark	Each (Supplied on Cut Tape)	1	$ 13.36
		10	$ 11.82
		25	$ 11.19
		50	$ 10.54
		100	$ 9.91
		250	$ 9.51
		500	$ 9.13

Description

General part information

SCT3160KW7HR Series

AEC-Q101 qualified automotive grade product. SCT3160KW7HR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Documents

Technical documentation and resources

Technical Data Sheet EN

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Measurement Method and Usage of Thermal Resistance RthJC

Judgment Criteria of Thermal Evaluation

Notes for Temperature Measurement Using Thermocouples

Solving the challenges of driving SiC MOSFETs with new packaging developments

How to Suppress the Parallel Drive Oscillation in SiC Modules

Application Note

4 Steps for Successful Thermal Designing of Power Devices

Compliance of the ELV directive

Environmental Data

Two-Resistor Model for Thermal Simulation

Thermal Resistance Measurement Method for SiC MOSFET

How to Use LTspice® Models

Schematic Design & Verification

TO-263-7L Package Dimensions

Package Information

Notes for Calculating Power Consumption:Static Operation

How to measure the oscillation occurs between parallel-connected devices

Technical Article

How to Use Thermal Models

Anti-Whisker formation

Package Information

SiC MOSFET Layout Design Considerations

Technical Article

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Best practices for the connection of Driver Source/Emitter terminals in discrete devices

Schematic Design & Verification

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

800V Three-Phase Output LLC DC/DC Resonant Converter

Schematic Design & Verification

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Notes on Gate Drive Voltage Setting and Linear Mode Application of SiC MOSFET

Technical Article

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

About Export Administration Regulations (EAR)

Export Information

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Method for Monitoring Switching Waveform

Schematic Design & Verification

5kW High-Efficiency Fan-less Inverter

Schematic Design & Verification

Precautions When Measuring the Rear of the Package with a Thermocouple

Part Explanation

Application Note

TO-263-7L Inner Structure

Package Information

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Technical Article

TO-263-7L Explanation for Marking

Package Information

Application Note for SiC Power Devices and Modules

Schematic Design & Verification

Precautions for Thermal Resistance of Insulation Sheet

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Basics and Design Guidelines for Gate Drive Circuits

Schematic Design & Verification

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

Precautions during gate-source voltage measurement for SiC MOSFET

Schematic Design & Verification

LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units

Types and Features of Transistors

Application Note

Gate-Source Voltage Surge Suppression Methods

Schematic Design & Verification

Calculating Power Loss from Measured Waveforms

Schematic Design & Verification

PCB Layout Thermal Design Guide

About Flammability of Materials

Environmental Data

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Oscillation countermeasures for MOSFETs in parallel

Schematic Design & Verification

How to Use PSIM Models

Schematic Design & Verification

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

How to Use PLECS Models

Technical Article

Moisture Sensitivity Level

Package Information

Snubber circuit design methods for SiC MOSFET

Schematic Design & Verification

What Is Thermal Design

Gate-source voltage behaviour in a bridge configuration

Schematic Design & Verification

Improvement of switching loss by driver source

Technical Article

Basics of Thermal Resistance and Heat Dissipation

Design Method for Comparator-less Miller Clamp Circuits

Schematic Design & Verification

TO-263-7L Taping Information

Package Information

What is a Thermal Model? (SiC Power Device)

Condition of Soldering

Package Information

SCT3160KW7HR Series

1200V, 17A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Grade	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	FET Type	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
Rohm Semiconductor SCT3160KW7HRTL	AEC-Q101	18 V	Automotive	398 pF	208 mOhm	N-Channel	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	TO-263-7L	1.2 kV	175 °C	5.6 V	Surface Mount	17 A	42 nC