Specification	FQPF7N65C

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds	1245 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	52 W
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FQPF7N65C Series

Power MOSFET, P-Channel, QFET®, -200 V, -5.2 A, 690 mΩ, TO-220F

Part	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FQPF7N20	690 mOhm	TO-220-3 Full Pack	MOSFET (Metal Oxide)	200 V	N-Channel	37 W	400 pF	10 V	TO-220F-3	10 nC	30 V	Through Hole	-55 °C	150 °C	5 V
ON Semiconductor FQPF7N65CYDTU	1.4 Ohm	TO-220-3 Full Pack Formed Leads	MOSFET (Metal Oxide)	650 V	N-Channel		1245 pF	10 V	TO-220F-3		30 V	Through Hole	-55 °C	150 °C	4 V	7 A	52 W	36 nC
ON Semiconductor FQPF7N65C_F105	1.4 Ohm	TO-220-3 Full Pack	MOSFET (Metal Oxide)	650 V	N-Channel		1245 pF	10 V	TO-220F-3		30 V	Through Hole	-55 °C	150 °C	4 V	7 A	52 W	36 nC
ON Semiconductor FQPF7N80	1.5 Ohm	TO-220-3 Full Pack	MOSFET (Metal Oxide)	800 V	N-Channel	56 W	1850 pF	10 V	TO-220F-3		30 V	Through Hole	-55 °C	150 °C	5 V	3.8 A		52 nC
ON Semiconductor FQPF7N65C	1.4 Ohm	TO-220-3 Full Pack	MOSFET (Metal Oxide)	650 V	N-Channel		1245 pF	10 V	TO-220F-3		30 V	Through Hole	-55 °C	150 °C	4 V	7 A	52 W	36 nC
ON Semiconductor FQPF7N80C	1.9 Ohm	TO-220-3 Full Pack	MOSFET (Metal Oxide)	800 V	N-Channel	56 W	1680 pF	10 V	TO-220F-3	35 nC	30 V	Through Hole	-55 °C	150 °C	5 V	6.6 A
ON Semiconductor FQPF7N80C	1.9 Ohm	TO-220-3 Full Pack	MOSFET (Metal Oxide)	800 V	N-Channel	56 W	1680 pF	10 V	TO-220F-3	35 nC	30 V	Through Hole	-55 °C	150 °C	5 V	6.6 A
ON Semiconductor FQPF7P20	690 mOhm	TO-220-3 Full Pack	MOSFET (Metal Oxide)	200 V	P-Channel		770 pF	10 V	TO-220F-3	25 nC	30 V	Through Hole	-55 °C	150 °C	5 V	5.2 A	45 W
ON Semiconductor FQPF7N20	690 mOhm	TO-220-3 Full Pack	MOSFET (Metal Oxide)	200 V	N-Channel	37 W	400 pF	10 V	TO-220F-3	10 nC	30 V	Through Hole	-55 °C	150 °C	5 V
ON Semiconductor FQPF7N10	350 mOhm	TO-220-3 Full Pack	MOSFET (Metal Oxide)	100 V	N-Channel		250 pF	10 V	TO-220F-3		25 V	Through Hole	-55 °C	175 ░C	4 V	5.5 A	23 W	7.5 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQPF7N65C Series

This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.