Discrete Semiconductor Products

IXFH14N60P

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Littelfuse/Commercial Vehicle Products

DISCMOSFETN-CH HIPERFET-POLAR TO-247AD/ TUBE

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Discrete Semiconductor Products

IXFH14N60P

Active

Littelfuse/Commercial Vehicle Products

DISCMOSFETN-CH HIPERFET-POLAR TO-247AD/ TUBE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH14N60P

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds	2500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	550 mOhm
Supplier Device Package	TO-247AD (IXFH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

IXFH14N60P Series

DiscMSFT NCh UltrJnctn XClass TO-247AD

Part	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]
Littelfuse/Commercial Vehicle Products IXFH14N85X	MOSFET (Metal Oxide)	550 mOhm	14 A	30 nC	5.5 V	TO-247 (IXTH)	Through Hole	460 W	850 V	10 V	TO-247-3	N-Channel	30 V	-55 °C	150 °C	1043 pF
Littelfuse/Commercial Vehicle Products IXFH14N80P	MOSFET (Metal Oxide)	720 mOhm	14 A	61 nC	5.5 V	TO-247AD (IXFH)	Through Hole		800 V	10 V	TO-247-3	N-Channel	30 V	-55 °C	150 °C	3900 pF	400 W
Littelfuse/Commercial Vehicle Products IXFH14N60P	MOSFET (Metal Oxide)	550 mOhm	14 A	36 nC	5.5 V	TO-247AD (IXFH)	Through Hole		600 V	10 V	TO-247-3	N-Channel	30 V	-55 °C	150 °C	2500 pF	300 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.86
		30	$ 4.64
		120	$ 3.98
		510	$ 3.54
		1020	$ 3.03
		2010	$ 2.85
Newark	Each	100	$ 3.90
		500	$ 3.55
		1000	$ 3.13
		2500	$ 2.92

Description

General part information

IXFH14N60P Series

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings

Documents

Technical documentation and resources