Discrete Semiconductor Products

MCU110N06YB-TP

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N-CHANNEL MOSFET,DPAK

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Discrete Semiconductor Products

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N-CHANNEL MOSFET,DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	MCU110N06YB-TP

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC
Input Capacitance (Ciss) (Max) @ Vds	4150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	80 W
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
Micro Commercial Components MCU110N06YA-TP	60 V	MOSFET (Metal Oxide)	2.5 V	90 nC	4.5 V 10 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.4 mOhm	89 W	N-Channel	-55 °C	150 °C	TO-252 (DPAK)	20 V	110 A	5450 pF
Micro Commercial Components MCU110N06YB-TP	60 V	MOSFET (Metal Oxide)	4 V		6 V 10 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	5 mOhm	80 W	N-Channel	-55 °C	150 °C	TO-252 (DPAK)	20 V	110 A	4150 pF	80 nC
Micro Commercial Components MCU110N08Y-TP	80 V	MOSFET (Metal Oxide)	2.5 V		4.5 V 10 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3		83 W	N-Channel	-55 °C	150 °C	TO-252 (DPAK)	20 V	110 A	6500 pF	95 nC	6 mOhm

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General part information

N-Channel 60 V 110A (Tc) 80W Surface Mount TO-252 (DPAK)

Technical documentation and resources