Discrete Semiconductor Products

SI7407DN-T1-E3

Obsolete

MOSFET P-CH 12V 9.9A PPAK 1212-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 12V 9.9A PPAK 1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7407DN-T1-E3

Current - Continuous Drain (Id) (Ta)	9.9 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	59 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max)	12 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

Part	Package Name	Vgs(th) (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Package / Case	Vgs (Max)	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	FET Type	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI7407DN-T1-GE3	PowerPAK® 1212-8	1 V	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	PowerPAK® 1212-8	8 V	12 mOhm	4.5 V	1.8 V	1.5 W	P-Channel	59 nC	12 V	9.9 A
Vishay Dale SI7407DN-T1-E3	PowerPAK® 1212-8	1 V	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	PowerPAK® 1212-8	8 V	12 mOhm	4.5 V	1.8 V	1.5 W	P-Channel	59 nC	12 V	9.9 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.72	30d+

3D models and CAD resources for this part

General part information

P-Channel 12 V 9.9A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources

No documents available