Discrete Semiconductor Products

SI7407DN-T1-E3

Obsolete

MOSFET P-CH 12V 9.9A PPAK 1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 12V 9.9A PPAK 1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7407DN-T1-E3

Current - Continuous Drain (Id) @ 25°C	9.9 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	59 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Type
Vishay General Semiconductor - Diodes Division SI7407DN-T1-E3	9.9 A	1.8 V 4.5 V	PowerPAK® 1212-8	59 nC	PowerPAK® 1212-8	MOSFET (Metal Oxide)	12 V	1 V	8 V	1.5 W	12 mOhm	Surface Mount	-55 °C	150 °C	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 12 V 9.9A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources

No documents available