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SOT-23-Thin
Integrated Circuits (ICs)

LM5050Q0MKX-1/NOPB

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Texas Instruments

AUTOMOTIVE, 5-V TO 75-V 400-UA IQ ORING FET CONTROLLER

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SOT-23-Thin
Integrated Circuits (ICs)

LM5050Q0MKX-1/NOPB

Active
Texas Instruments

AUTOMOTIVE, 5-V TO 75-V 400-UA IQ ORING FET CONTROLLER

Technical Specifications

Parameters and characteristics for this part

SpecificationLM5050Q0MKX-1/NOPB
ApplicationsRedundant Power Supplies
Current - Supply130 µA
Delay Time - OFF486 ns
FET TypeN-Channel
GradeAutomotive
Internal Switch(s)False
Mounting TypeSurface Mount
Package / CaseTSOT-23-6, SOT-23-6 Thin
QualificationAEC-Q100
Ratio - Input:Output [custom]N:1
Supplier Device PackageSOT-23-THIN
TypeN+1 ORing Controller
Voltage - Supply [Max]75 V
Voltage - Supply [Min]5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.65
10$ 2.38
25$ 2.24
100$ 1.91
250$ 1.79
500$ 1.57
1000$ 1.30
Digi-Reel® 1$ 2.65
10$ 2.38
25$ 2.24
100$ 1.91
250$ 1.79
500$ 1.57
1000$ 1.30
Tape & Reel (TR) 3000$ 1.11
Texas InstrumentsLARGE T&R 1$ 1.99
100$ 1.65
250$ 1.18
1000$ 0.89

Description

General part information

LM5050-1-Q1 Series

The LM5050-1/-Q1 High Side OR-ing FET Controller operates in conjunction with an external MOSFET as an ideal diode rectifier when connected in series with a power source. This ORing controller allows MOSFETs to replace diode rectifiers in power distribution networks thus reducing both power loss and voltage drops.

The LM5050-1/-Q1 controller provides charge pump gate drive for an external N-Channel MOSFET and a fast response comparator to turn off the FET when current flows in the reverse direction. The LM5050-1/-Q1 can connect power supplies ranging from 5 V to 75 V and can withstand transients up to 100 V.

The LM5050-1/-Q1 High Side OR-ing FET Controller operates in conjunction with an external MOSFET as an ideal diode rectifier when connected in series with a power source. This ORing controller allows MOSFETs to replace diode rectifiers in power distribution networks thus reducing both power loss and voltage drops.