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Technical Specifications
Parameters and characteristics for this part
| Specification | SM72482MA-4/NOPB |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) [custom] | 5 A |
| Current - Peak Output (Source, Sink) [custom] | 3 A |
| Driven Configuration | Low-Side |
| Gate Type | N-Channel MOSFET |
| Input Type | Non-Inverting, Inverting |
| Logic Voltage - VIL, VIH [custom] | 2.2 V |
| Logic Voltage - VIL, VIH [custom] | 0.8 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 125 ¯C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Rise / Fall Time (Typ) [custom] | 12 ns |
| Rise / Fall Time (Typ) [custom] | 14 ns |
| Supplier Device Package | 8-SOIC |
| Voltage - Supply [Max] | 14 V |
| Voltage - Supply [Min] | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 3.41 | |
| 10 | $ 2.25 | |||
| 25 | $ 1.94 | |||
| 100 | $ 1.60 | |||
| 250 | $ 1.44 | |||
| 500 | $ 1.34 | |||
| 1000 | $ 1.28 | |||
| Texas Instruments | TUBE | 1 | $ 2.29 | |
| 100 | $ 1.89 | |||
| 250 | $ 1.36 | |||
| 1000 | $ 1.02 | |||
Description
General part information
SM72482 Series
The SM72482 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC package.
The SM72482 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC package.
Documents
Technical documentation and resources
