Discrete Semiconductor Products

BUK6D120-60PX

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MOSFET P-CH 60V 3A/8A 6DFN

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Discrete Semiconductor Products

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MOSFET P-CH 60V 3A/8A 6DFN

Technical Specifications

Parameters and characteristics for this part

Specification	BUK6D120-60PX

Current - Continuous Drain (Id) @ 25°C	3 A, 8 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	724 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	15 W, 2.3 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.2 V

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Grade	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	FET Type	Package / Case	Mounting Type	Supplier Device Package	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
Freescale Semiconductor - NXP BUK6D120-60PX	60 V	4.5 V 10 V	Automotive	2.3 W 15 W	724 pF	18 nC	3 A 8 A	MOSFET (Metal Oxide)	20 V	P-Channel	6-UDFN Exposed Pad	Surface Mount	DFN2020MD-6	AEC-Q101	-55 °C	175 ░C	3.2 V	120 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 3A (Ta), 8A (Tc) 2.3W (Ta), 15W (Tc) Surface Mount DFN2020MD-6

Technical documentation and resources