BUK9M19-60EX

Active

MOSFET N-CH 60V 38A LFPAK33

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 60V 38A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9M19-60EX

Current - Continuous Drain (Id) @ 25°C	38 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1814 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max) [Max]	62 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2.1 V

Part	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Grade	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]
Freescale Semiconductor - NXP BUK9M19-60EX	AEC-Q101	1814 pF	60 V	Automotive	N-Channel	17 mOhm	Surface Mount	2.1 V	LFPAK33	5 V	13.8 nC	62 W	38 A	MOSFET (Metal Oxide)	10 V	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 38A (Tc) 62W (Tc) Surface Mount LFPAK33

Technical documentation and resources