Discrete Semiconductor Products

SQM50034EL_GE3

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MOSFET N-CH 60V 100A TO263

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Discrete Semiconductor Products

Active

MOSFET N-CH 60V 100A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SQM50034EL_GE3

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	90 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	6100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	150 W
Qualification	AEC-Q101
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package
Vishay General Semiconductor - Diodes Division SQM50034EL_GE3	Automotive	-55 °C	175 ░C	4.5 V 10 V	AEC-Q101	MOSFET (Metal Oxide)	60 V	100 A	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	2.5 V	150 W	6100 pF	20 V	90 nC	TO-263 (D2PAK)

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General part information

N-Channel 60 V 100A (Tc) 150W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources