Discrete Semiconductor Products
TK8R2E06PL,S1X
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.0082 Ω@10V, TO-220, U-MOSⅨ-H
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Discrete Semiconductor Products
TK8R2E06PL,S1X
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.0082 Ω@10V, TO-220, U-MOSⅨ-H
Technical Specifications
Parameters and characteristics for this part
| Specification | TK8R2E06PL,S1X |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 81 W |
| Rds On (Max) @ Id, Vgs [Max] | 8.2 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 42 | $ 1.98 | |
| Tube | 1 | $ 1.70 | ||
| 10 | $ 1.08 | |||
| 100 | $ 0.72 | |||
| 500 | $ 0.57 | |||
| 1000 | $ 0.52 | |||
| 2000 | $ 0.48 | |||
| 5000 | $ 0.44 | |||
| 10000 | $ 0.43 | |||
Description
General part information
TK8R2E06PL Series
12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.0082 Ω@10V, TO-220, U-MOSⅨ-H
Documents
Technical documentation and resources