Discrete Semiconductor Products

IXTT24P20

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DISC MOSFET P CHANNEL-STD TO-268AA/ TUBE

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Discrete Semiconductor Products

Active

DISC MOSFET P CHANNEL-STD TO-268AA/ TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	IXTT24P20

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC
Input Capacitance (Ciss) (Max) @ Vds	4200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	TO-268AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
Littelfuse/Commercial Vehicle Products IXTT24P20	P-Channel	24 A	10 V	150 nC	Surface Mount	5 V	300 W	110 mOhm	-55 °C	150 °C	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	200 V	MOSFET (Metal Oxide)	TO-268AA	4200 pF	20 V

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General part information

P-Channel 200 V 24A (Tc) 300W (Tc) Surface Mount TO-268AA

Technical documentation and resources

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