Discrete Semiconductor Products

2SK4066-DL-1EX

Obsolete

MOSFET N-CH 60V 100A TO263-2

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 100A TO263-2

Technical Specifications

Parameters and characteristics for this part

Specification	2SK4066-DL-1EX

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	60 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	220 nC
Input Capacitance (Ciss) (Max) @ Vds	12500 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	90 W, 1.65 W
Rds On (Max) @ Id, Vgs	4.7 mOhm
Supplier Device Package	TO-263-2
Technology	MOSFET (Metal Oxide)

Part	Operating Temperature	Mounting Type	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)
ON Semiconductor 2SK4066-DL-1E	150 °C	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	4 V	10 V	20 V	MOSFET (Metal Oxide)	100 A	12500 pF	TO-263-2	220 nC	4.7 mOhm	60 V	1.65 W 90 W
ON Semiconductor 2SK4066-DL-1EX	150 °C	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel				MOSFET (Metal Oxide)	100 A	12500 pF	TO-263-2	220 nC	4.7 mOhm	60 V	1.65 W 90 W
ON Semiconductor 2SK4066-1E	150 °C	Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	N-Channel	4 V	10 V	20 V	MOSFET (Metal Oxide)	100 A	12500 pF	TO-262-3	220 nC	4.7 mOhm	60 V	1.65 W 90 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 100A (Ta) 1.65W (Ta), 90W (Tc) Surface Mount TO-263-2

Technical documentation and resources

No documents available