Specification	RQJ0305EQDQS#H1

Current - Continuous Drain (Id) @ 25°C	3.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	330 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power Dissipation (Max) [Max]	1.5 W
Rds On (Max) @ Id, Vgs	140 mOhm
Supplier Device Package	UPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs (Max) [Min]	-12 V
Vgs(th) (Max) @ Id	1.4 V

RQJ0305EQDQS Series

Pch Single Power Mosfet -30V -3.4A 140Mohm Upak/Sc-62

Part	Rds On (Max) @ Id, Vgs	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Vgs (Max) [Max]	Vgs (Max) [Min]	Technology	Power Dissipation (Max) [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
Renesas Electronics Corporation RQJ0305EQDQS#H1	140 mOhm	TO-243AA	Surface Mount	30 V	2.5 V	4.5 V	1.4 V	P-Channel	330 pF	150 °C	8 V	-12 V	MOSFET (Metal Oxide)	1.5 W	UPAK	3.4 A	3 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

The RQJ0305EQDQS is a Pch Single Power Mosfet -30V -3.4A 140Mohm Upak/Sc-62.

Technical documentation and resources