Discrete Semiconductor Products

CLH01(TE16L,Q)

Obsolete

DIODE GEN PURP 200V 3A L-FLAT

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 200V 3A L-FLAT

Technical Specifications

Parameters and characteristics for this part

Specification	CLH01(TE16L,Q)

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	10 ÁA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	L-FLAT™
Reverse Recovery Time (trr)	35 ns
Speed	500 ns, 200 mA
Supplier Device Package	L-FLAT™ (4x5.5)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If [Max]	980 mV

Part	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Supplier Device Package	Current - Average Rectified (Io)	Speed	Technology	Package / Case
Toshiba Semiconductor and Storage CLH01(TE16L,Q)	35 ns	200 V	980 mV	Surface Mount	10 ÁA	-40 °C	150 °C	L-FLAT™ (4x5.5)	3 A	200 mA 500 ns	Standard	L-FLAT™

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 200 V 3A Surface Mount L-FLAT™ (4x5.5)

Technical documentation and resources