Discrete Semiconductor Products

SI7121ADN-T1-GE3

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MOSFET, P-CH, 30V, 18A, POWERPAK 1212 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

MOSFET, P-CH, 30V, 18A, POWERPAK 1212 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	SI7121ADN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	1870 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	27.8 W, 3.5 W
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package
Vishay General Semiconductor - Diodes Division SI7121DN-T1-GE3	1960 pF	25 V	MOSFET (Metal Oxide)	PowerPAK® 1212-8	P-Channel	65 nC	150 °C	-50 °C	16 A	3.7 W 52 W	4.5 V 10 V	18 mOhm	Surface Mount	3 V	30 V	PowerPAK® 1212-8
Vishay General Semiconductor - Diodes Division SI7121ADN-T1-GE3	1870 pF	25 V	MOSFET (Metal Oxide)	PowerPAK® 1212-8	P-Channel	50 nC	150 °C	-50 °C	12 A	3.5 W 27.8 W	4.5 V 10 V	15 mOhm	Surface Mount	2.5 V	30 V	PowerPAK® 1212-8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 12A (Ta) 3.5W (Ta), 27.8W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources