Discrete Semiconductor Products

SI8900EDB-T2-E1

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MOSFET 2N-CH 20V 5.4A 10-MFP

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Discrete Semiconductor Products

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MOSFET 2N-CH 20V 5.4A 10-MFP

Technical Specifications

Parameters and characteristics for this part

Specification	SI8900EDB-T2-E1

Configuration	2 N-Channel (Dual) Common Drain
Current - Continuous Drain (Id) @ 25°C	5.4 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	10-UFBGA, CSPBGA
Power - Max [Max]	1 W
Supplier Device Package	10-Micro Foot™ CSP (2x5)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Supplier Device Package	Mounting Type	Power - Max [Max]	Package / Case	Configuration	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI8900EDB-T2-E1	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C	Logic Level Gate	10-Micro Foot™ CSP (2x5)	Surface Mount	1 W	10-UFBGA CSPBGA	2 N-Channel (Dual) Common Drain	1 V	5.4 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 5.4A 1W Surface Mount 10-Micro Foot™ CSP (2x5)

Technical documentation and resources

No documents available