Discrete Semiconductor Products

BUK7210-55B/C1,118

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MOSFET N-CH 55V 75A DPAK

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Discrete Semiconductor Products

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MOSFET N-CH 55V 75A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7210-55B/C1,118

Current - Continuous Drain (Id) (Tc)	75 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	35 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	2453 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	185 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	DPak
Power Dissipation (Max)	167 W
Qualification	AEC-Q101
Rds On (Max)	10 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Rds On (Max)	Package / Case	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Grade	Package Name	Qualification	Gate Charge (Max)
NXP USA Inc. BUK7210-55B/C1,118	167 W	N-Channel	2453 pF	Surface Mount	75 A	55 V	10 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	10 V	MOSFET (Metal Oxide)	4 V	-55 °C	185 °C	Automotive	DPak	AEC-Q101	35 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 55 V 75A (Tc) 167W (Tc) Surface Mount DPAK

Technical documentation and resources

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