Discrete Semiconductor Products

BUK7210-55B/C1,118

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MOSFET N-CH 55V 75A DPAK

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Discrete Semiconductor Products

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MOSFET N-CH 55V 75A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7210-55B/C1,118

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	2453 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	185 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	167 W
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Supplier Device Package	Power Dissipation (Max)
Freescale Semiconductor - NXP BUK7210-55B/C1,118	35 nC	MOSFET (Metal Oxide)	10 mOhm	Surface Mount	185 °C	-55 °C	10 V	75 A	20 V	2453 pF	55 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	167 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 75A (Tc) 167W (Tc) Surface Mount DPAK

Technical documentation and resources

No documents available