FQA36P15

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ON Semiconductor

POWER MOSFET, P-CHANNEL, QFET®, -150 V, -36 A, 90 MΩ, TO-3P

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DocumentsDatasheet Package Drawing-340BZ-TO-3P-3LD / EIAJ SC-65, ISOLATED

Discrete Semiconductor Products

FQA36P15

Active

ON Semiconductor

POWER MOSFET, P-CHANNEL, QFET®, -150 V, -36 A, 90 MΩ, TO-3P

Deep-Dive with AI

DocumentsDatasheet Package Drawing-340BZ-TO-3P-3LD / EIAJ SC-65, ISOLATED

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FQA36P15

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	105 nC
Input Capacitance (Ciss) (Max) @ Vds	3320 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	294 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	TO-3PN
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FQA36P15 Series

Power MOSFET, P-Channel, QFET®, -150 V, -36 A, 90 mΩ, TO-3P

Part	Mounting Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	Technology	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FQA36P15	Through Hole	30 V	-55 °C	175 ░C	90 mOhm	4 V	10 V	105 nC	150 V	36 A	TO-3PN	294 W	MOSFET (Metal Oxide)	SC-65-3 TO-3P-3	P-Channel	3320 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

ON Semiconductor	N/A	1	$ 1.70

Description

General part information

FQA36P15 Series

This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.