Discrete Semiconductor Products

BD136

Obsolete

ON Semiconductor

TRANS GP BJT PNP 45V 1.5A 1250MW 3-PIN(3+TAB) TO-225 BOX

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DocumentsDatasheet Package Drawing-77-09-TO-225 +1

Discrete Semiconductor Products

BD136

Obsolete

ON Semiconductor

TRANS GP BJT PNP 45V 1.5A 1250MW 3-PIN(3+TAB) TO-225 BOX

Deep-Dive with AI

DocumentsDatasheet Package Drawing-77-09-TO-225 +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BD136

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	1.25 W
Supplier Device Package	TO-126
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	45 V

BD13616 Series

1.5 A, 45 V PNP Bipolar Junction Medium Power Transistor

Part	Current - Collector Cutoff (Max) [Max]	Package / Case	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Mounting Type	Current - Collector (Ic) (Max) [Max]	Transistor Type	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor BD13610S	100 nA	TO-126-3 TO-225AA	1.25 W	45 V	TO-126-3	Through Hole	1.5 A	PNP	150 °C	63 hFE	500 mV
ON Semiconductor BD13610STU	100 nA	TO-126-3 TO-225AA	1.25 W	45 V	TO-126-3	Through Hole	1.5 A	PNP	150 °C	63 hFE	500 mV
ON Semiconductor BD136G	100 nA	TO-126-3 TO-225AA	1.25 W	45 V	TO-126	Through Hole	1.5 A	PNP		40	500 mV	-55 °C	150 °C
ON Semiconductor BD136	100 nA	TO-126-3 TO-225AA	1.25 W	45 V	TO-126	Through Hole	1.5 A	PNP		40	500 mV	-55 °C	150 °C
ON Semiconductor BD13610S	100 nA	TO-126-3 TO-225AA	1.25 W	45 V	TO-126-3	Through Hole	1.5 A	PNP	150 °C	63 hFE	500 mV
ON Semiconductor BD13616STU	100 nA	TO-126-3 TO-225AA	1.25 W	45 V	TO-126-3	Through Hole	1.5 A	PNP	150 °C	100	500 mV
ON Semiconductor BD13616STU	100 nA	TO-126-3 TO-225AA	1.25 W	45 V	TO-126-3	Through Hole	1.5 A	PNP	150 °C	100	500 mV
ON Semiconductor BD13610STU	100 nA	TO-126-3 TO-225AA	1.25 W	45 V	TO-126-3	Through Hole	1.5 A	PNP	150 °C	63 hFE	500 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 0.72
		50	$ 0.33
		100	$ 0.29
		500	$ 0.22
		1000	$ 0.20
		2000	$ 0.18
		5000	$ 0.16
		10000	$ 0.14
		50000	$ 0.13

Description

General part information

BD13616 Series

This series of plastic, 1.5 A, 45 V PNP Power Bipolar Junction Transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.