Discrete Semiconductor Products

PHC21025,118

Obsolete

MOSFET N/P-CH 30V 3.5A/2.3A 8SO

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 30V 3.5A/2.3A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	PHC21025,118

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	2.3 A, 3.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	30 nC
Input Capacitance (Ciss) (Max) @ Vds	250 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.8 V

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Power - Max [Max]	Operating Temperature
Freescale Semiconductor - NXP PHC21025,118	100 mOhm	30 V	8-SO	250 pF	MOSFET (Metal Oxide)	Surface Mount	Logic Level Gate	30 nC	N and P-Channel	2.3 A 3.5 A	2.8 V	8-SOIC	3.9 mm	0.154 in	2 W	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1025	$ 0.29

General part information

Mosfet Array 30V 3.5A, 2.3A 2W Surface Mount 8-SO

Technical documentation and resources