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PowerPAK® SO-8 Dual
Discrete Semiconductor Products

SQJ968EP-T1_GE3

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Vishay General Semiconductor - Diodes Division

MOSFET 2N-CH 60V 23.5A PPAK SO8

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PowerPAK® SO-8 Dual
Discrete Semiconductor Products

SQJ968EP-T1_GE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET 2N-CH 60V 23.5A PPAK SO8

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSQJ968EP-T1_GE3
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C23.5 A
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs [Max]18.5 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds714 pF
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs33.6 mOhm
Supplier Device PackagePowerPAK® SO-8 Dual
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.06
10$ 0.86
100$ 0.67
500$ 0.57
1000$ 0.46
Tape & Reel (TR) 3000$ 0.44
6000$ 0.42
9000$ 0.40

Description

General part information

SQJ968 Series

Mosfet Array 60V 23.5A (Tc) 42W (Tc) Surface Mount PowerPAK® SO-8 Dual

Documents

Technical documentation and resources