Discrete Semiconductor Products

PSMN2R9-25YLC,115

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MOSFET N-CH 25V 100A LFPAK56

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Discrete Semiconductor Products

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MOSFET N-CH 25V 100A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN2R9-25YLC,115

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	2083 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	92 W
Rds On (Max) @ Id, Vgs	3.15 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case
Freescale Semiconductor - NXP PSMN2R9-30MLC,115	2419 pF	2.15 V	LFPAK33	N-Channel	4.5 V 10 V	36.1 nC	20 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	Surface Mount	30 V	70 A
Freescale Semiconductor - NXP PSMN2R9-25YLC,115			LFPAK56 Power-SO8	N-Channel	4.5 V 10 V		20 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	Surface Mount	25 V	100 A	3.15 mOhm	92 W	2083 pF	SC-100 SOT-669

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General part information

N-Channel 25 V 100A (Tc) 92W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources