Discrete Semiconductor Products

SQUN702E-T1_GE3

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MOSFET N/P-CH 40V/200V 30A DIE

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Discrete Semiconductor Products

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MOSFET N/P-CH 40V/200V 30A DIE

Technical Specifications

Parameters and characteristics for this part

Specification	SQUN702E-T1_GE3

Configuration	Common Drain, N and P-Channel
Current - Continuous Drain (Id) @ 25°C [Max]	30 A
Current - Continuous Drain (Id) @ 25°C [Min]	20 A
Drain to Source Voltage (Vdss)	40 V, 200 V
Gate Charge (Qg) (Max) @ Vgs	23 nC, 30.2 nC, 14 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1450 pF, 1302 pF, 1474 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	Die
Power - Max	60 W, 48 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	60 mOhm, 9.2 mOhm, 30 mOhm
Supplier Device Package	Die
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V, 3.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Technology	Package / Case	Power - Max	Drain to Source Voltage (Vdss)	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Current - Continuous Drain (Id) @ 25°C [Max]	Current - Continuous Drain (Id) @ 25°C [Min]	Supplier Device Package	Qualification	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type
Vishay General Semiconductor - Diodes Division SQUN702E-T1_GE3	14 nC 23 nC 30.2 nC	MOSFET (Metal Oxide)	Die	48 W 60 W	40 V 200 V	Common Drain N and P-Channel	1302 pF 1450 pF 1474 pF	-55 °C	175 ░C	Automotive	30 A	20 A	Die	AEC-Q101	2.5 V 3.5 V	9.2 mOhm 30 mOhm 60 mOhm	Surface Mount Wettable Flank

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General part information

Mosfet Array 40V, 200V 30A (Tc), 20A (Tc) 48W (Tc), 60W (Tc) Surface Mount, Wettable Flank Die

Technical documentation and resources