Discrete Semiconductor Products

MSJL20N60A-TP

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N-CHANNEL MOSFET,DFN8080A

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Discrete Semiconductor Products

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N-CHANNEL MOSFET,DFN8080A

Technical Specifications

Parameters and characteristics for this part

Specification	MSJL20N60A-TP

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1336 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-PowerVSFN
Power Dissipation (Max) [Max]	196 W
Rds On (Max) @ Id, Vgs	219 mOhm
Supplier Device Package	DFN8080A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs
Micro Commercial Components MSJL20N60A-TP	600 V	1336 pF	-55 °C	150 °C	N-Channel	DFN8080A	20 A	10 V	Surface Mount	196 W	4 V	219 mOhm	MOSFET (Metal Oxide)	30 V	4-PowerVSFN	36 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 20A 196W Surface Mount DFN8080A

Technical documentation and resources