Specification	2SB817C-1E

Current - Collector (Ic) (Max) [Max]	12 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	10 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	120 W
Supplier Device Package	TO-3P-3L
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	2 V
Voltage - Collector Emitter Breakdown (Max)	140 V

2SB817C Series

Bipolar Transistor, -140V, -12A, Low VCE(sat) PNP TO-3P-3L

Part	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Operating Temperature	Power - Max [Max]	Mounting Type	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Transistor Type
ON Semiconductor 2SB817C-1E	10 MHz	12 A	TO-3P-3L	150 °C	120 W	Through Hole	SC-65-3 TO-3P-3	100 hFE	2 V	140 V	100 µA	PNP

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

2SB817C is Bipolar Transistor, -140V, -12A, Low VCE(sat) PNP TO-3P-3L.

Technical documentation and resources