Specification	FCH099N60E

Current - Continuous Drain (Id) @ 25°C	37 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	114 nC
Input Capacitance (Ciss) (Max) @ Vds	3465 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	357 W
Rds On (Max) @ Id, Vgs	99 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

FCH099N65S3 Series

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 30 A, 99 mΩ, TO-247

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]
ON Semiconductor FCH099N60E	20 V	600 V	37 A	357 W	114 nC	3.5 V	N-Channel	3465 pF	MOSFET (Metal Oxide)	Through Hole	TO-247-3	99 mOhm	10 V	-55 °C	150 °C	TO-247-3
ON Semiconductor FCH099N65S3_F155	30 V	650 V	30 A			4.5 V	N-Channel		MOSFET (Metal Oxide)	Through Hole	TO-247-3	99 mOhm	10 V	-55 °C	150 °C	TO-247-3	2480 pF	61 nC	227 W
ON Semiconductor FCH099N65S3-F155	30 V	650 V	30 A			4.5 V	N-Channel		MOSFET (Metal Oxide)	Through Hole	TO-247-3	99 mOhm	10 V	-55 °C	150 °C	TO-247-3	2480 pF	61 nC	227 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Newark	Each	50	$ 3.29
		100	$ 2.86
		250	$ 2.39
		500	$ 2.32

Description

General part information

FCH099N65S3 Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the "E" part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.