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Technical Specifications
Parameters and characteristics for this part
| Specification | RQ1E070RPTR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 4 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 26 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Power Dissipation (Max) [Max] | 550 mW |
| Rds On (Max) @ Id, Vgs | 17 mOhm |
| Supplier Device Package | TSMT8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
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Description
General part information
RQ1E070RP Series
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Documents
Technical documentation and resources