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Discrete Semiconductor Products
A3T21H360W23SR6
ActiveFreescale Semiconductor - NXP
RF POWER FIELD-EFFECT TRANSISTOR
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Discrete Semiconductor Products
A3T21H360W23SR6
ActiveFreescale Semiconductor - NXP
RF POWER FIELD-EFFECT TRANSISTOR
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | A3T21H360W23SR6 |
|---|---|
| Configuration | Dual |
| Current - Test | 600 mA |
| Current Rating (Amps) | 10 µA |
| Frequency [Max] | 2.2 GHz |
| Frequency [Min] | 2.11 GHz |
| Gain | 16.4 dB |
| Mounting Type | Chassis Mount |
| Package / Case | ACP-1230S-4L2S |
| Power - Output | 328 W |
| Supplier Device Package | ACP-1230S-4L2S |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 150 | $ 68.39 | |
Description
General part information
A3T21 Series
RF Mosfet 28 V 600 mA 2.11GHz ~ 2.2GHz 16.4dB 328W ACP-1230S-4L2S
Documents
Technical documentation and resources