Discrete Semiconductor Products

UM6K31NTN

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MOSFET, DUAL N-CH, 60V, SOT-363

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DocumentsImportance of Probe Calibration When Measuring Power: Deskew MOSFET Gate Resistor Setting for Motor Driving +38

Discrete Semiconductor Products

UM6K31NTN

Active

Rohm Semiconductor

MOSFET, DUAL N-CH, 60V, SOT-363

Deep-Dive with AI

DocumentsImportance of Probe Calibration When Measuring Power: Deskew MOSFET Gate Resistor Setting for Motor Driving +38

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	UM6K31NTN

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	250 mA
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate, 2.5V Drive
Input Capacitance (Ciss) (Max) @ Vds [Max]	15 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Rds On (Max) @ Id, Vgs	2.4 Ohm
Supplier Device Package	UMT6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.3 V

UM6K31N Series

2.5V Drive Nch+Nch MOSFET

Part	Operating Temperature	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Package / Case	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	Configuration
Rohm Semiconductor UM6K31NTN	150 °C	2.3 V	15 pF	2.4 Ohm	Surface Mount	UMT6	6-TSSOP SC-88 SOT-363	Logic Level Gate 2.5V Drive	60 V	250 mA	MOSFET (Metal Oxide)	2 N-Channel (Dual)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	70593	$ 0.50
Newark	Each (Supplied on Cut Tape)	1	$ 0.42
		10	$ 0.25
		25	$ 0.21
		50	$ 0.17
		100	$ 0.14
		250	$ 0.13
		500	$ 0.12
		1000	$ 0.11

Description

General part information

UM6K31N Series

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.