Discrete Semiconductor Products

SI1417EDH-T1-E3

Obsolete

MOSFET P-CH 12V 2.7A SC70-6

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 12V 2.7A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1417EDH-T1-E3

Current - Continuous Drain (Id) @ 25°C	2.7 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	85 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	450 mV

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Power Dissipation (Max)	Supplier Device Package	FET Type	Mounting Type	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SI1417EDH-T1-E3	85 mOhm	-55 °C	150 °C	12 V	1.8 V 4.5 V	MOSFET (Metal Oxide)	450 mV	2.7 A	8 nC	6-TSSOP SC-88 SOT-363	1 W	SC-70-6	P-Channel	Surface Mount	12 V
Vishay General Semiconductor - Diodes Division SI1417EDH-T1-GE3	85 mOhm	-55 °C	150 °C	12 V	1.8 V 4.5 V	MOSFET (Metal Oxide)	450 mV	2.7 A	8 nC	6-TSSOP SC-88 SOT-363	1 W	SC-70-6	P-Channel	Surface Mount	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 12 V 2.7A (Ta) 1W (Ta) Surface Mount SC-70-6

Technical documentation and resources

No documents available