Specification	FFD08S60S-F085

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	100 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Qualification	AEC-Q101
Reverse Recovery Time (trr)	30 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-252AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.6 V

FFD08S60S_F085 Series

600V, 8A, 2.1V, DPAK<BR>STEALTH™ II Rectifier

Part	Technology	Package / Case	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Qualification	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Grade	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package
ON Semiconductor FFD08S60S-F085	Standard	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	100 µA	600 V	200 mA 500 ns	AEC-Q101	8 A	30 ns	150 °C	-65 C	Automotive	2.6 V	TO-252AA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FFD08S60S_F085 Series

The FFD08S60S_F085 is stealth 2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.