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Littelfuse Power Semi TO-264 3 H 4R 1W2N 3L image
Discrete Semiconductor Products

IXFK220N15P

Active
Littelfuse/Commercial Vehicle Products

DISCMOSFETN-CH HIPERFET-POLAR TO-264(3)/ TUBE

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Littelfuse Power Semi TO-264 3 H 4R 1W2N 3L image
Discrete Semiconductor Products

IXFK220N15P

Active
Littelfuse/Commercial Vehicle Products

DISCMOSFETN-CH HIPERFET-POLAR TO-264(3)/ TUBE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIXFK220N15P
Current - Continuous Drain (Id) @ 25°C220 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]162 nC
Input Capacitance (Ciss) (Max) @ Vds15400 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-264AA, TO-264-3
Power Dissipation (Max)1250 W
Rds On (Max) @ Id, Vgs9 mOhm
Supplier Device PackageTO-264AA (IXFK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 23.31
25$ 19.32
100$ 18.11
500$ 15.46
NewarkEach 250$ 15.67

Description

General part information

IXFK220N17T2 Series

These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost

Documents

Technical documentation and resources