Discrete Semiconductor Products

MSJW20N65A-BP

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MOSFET N-CH TO247

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Discrete Semiconductor Products

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MOSFET N-CH TO247

Technical Specifications

Parameters and characteristics for this part

Specification	MSJW20N65A-BP

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC
Input Capacitance (Ciss) (Max) @ Vds	1740 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	250 W
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs (Max)	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)
Micro Commercial Components MSJW20N65-BP	20 A	TO-247-3	30 V	Through Hole	TO-247-3
Micro Commercial Components MSJW20N65A-BP	20 A	TO-247-3	30 V	Through Hole	TO-247-3	1740 pF	650 V	-55 °C	150 °C	5 V	250 W	54 nC	180 mOhm	N-Channel	MOSFET (Metal Oxide)	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 20A (Tc) 250W (Tj) Through Hole TO-247-3

Technical documentation and resources