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NX3008PBKMB,315
Discrete Semiconductor Products

PDTA115EMB,315

Active
Nexperia USA Inc.

PNP RESISTOR-EQUIPPED TRANSISTOR; R1 = 100 KΩ, R2 = 100 KΩ

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NX3008PBKMB,315
Discrete Semiconductor Products

PDTA115EMB,315

Active
Nexperia USA Inc.

PNP RESISTOR-EQUIPPED TRANSISTOR; R1 = 100 KΩ, R2 = 100 KΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationPDTA115EMB,315
Current - Collector (Ic) (Max) [Max]20 mA
Current - Collector Cutoff (Max) [Max]1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]80
Frequency - Transition180 MHz
Mounting TypeSurface Mount
Package / CaseSOT-883, SC-101
Power - Max [Max]250 mW
Resistor - Base (R1)100 kOhms
Resistor - Emitter Base (R2)100 kOhms
Resistors IncludedR1, R2
Supplier Device PackageDFN1006B-3
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic150 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 9217$ 0.03

Description

General part information

PDTA115 Series

PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC115EMB.