
Discrete Semiconductor Products
PDTA115EMB,315
ActiveNexperia USA Inc.
PNP RESISTOR-EQUIPPED TRANSISTOR; R1 = 100 KΩ, R2 = 100 KΩ
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Discrete Semiconductor Products
PDTA115EMB,315
ActiveNexperia USA Inc.
PNP RESISTOR-EQUIPPED TRANSISTOR; R1 = 100 KΩ, R2 = 100 KΩ
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Technical Specifications
Parameters and characteristics for this part
| Specification | PDTA115EMB,315 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 20 mA |
| Current - Collector Cutoff (Max) [Max] | 1 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 80 |
| Frequency - Transition | 180 MHz |
| Mounting Type | Surface Mount |
| Package / Case | SOT-883, SC-101 |
| Power - Max [Max] | 250 mW |
| Resistor - Base (R1) | 100 kOhms |
| Resistor - Emitter Base (R2) | 100 kOhms |
| Resistors Included | R1, R2 |
| Supplier Device Package | DFN1006B-3 |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 9217 | $ 0.03 | |
Description
General part information
PDTA115 Series
PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC115EMB.
Documents
Technical documentation and resources