Specification	MBR2560CT

Current - Average Rectified (Io) (per Diode)	25 A
Current - Reverse Leakage @ Vr	200 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AB
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If [Max]	750 mV

MBR2560 Series

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Diode Configuration	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Mounting Type	Package / Case	Grade	Qualification
Taiwan Semiconductor Corporation MBR2560CT	60 V	TO-220AB	1 Pair Common Cathode	750 mV	200 µA	25 A	200 mA 500 ns	150 °C	-55 °C	Schottky	Through Hole	TO-220-3
Taiwan Semiconductor Corporation MBR2560CTH	60 V	TO-220AB	1 Pair Common Cathode	750 mV	200 µA	25 A	200 mA 500 ns	150 °C	-55 °C	Schottky	Through Hole	TO-220-3	Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 60 V 25A Through Hole TO-220-3

Technical documentation and resources