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TO-3P-3,TO-247-3
Discrete Semiconductor Products

FDA59N30

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 300 V, 59 A, 0.047 OHM, TO-3P, THROUGH HOLE

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TO-3P-3,TO-247-3
Discrete Semiconductor Products

FDA59N30

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 300 V, 59 A, 0.047 OHM, TO-3P, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

SpecificationFDA59N30
Current - Continuous Drain (Id) @ 25°C59 A
Drain to Source Voltage (Vdss)300 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]100 nC
Input Capacitance (Ciss) (Max) @ Vds4670 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-65-3, TO-3P-3
Power Dissipation (Max)500 W
Supplier Device PackageTO-3PN
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 5.10
10$ 3.40
100$ 2.43
500$ 2.01
1000$ 1.94
NewarkEach 1$ 1.90
ON SemiconductorN/A 1$ 2.07

Description

General part information

FDA59N30 Series

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.