Specification	NTP125N60S5H

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	37.3 nC
Input Capacitance (Ciss) (Max) @ Vds	2036 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	152 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.3 V

NTP125N60S5H Series

Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 22 A, 125 mΩ, TO-220

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	FET Type	Vgs(th) (Max) @ Id
ON Semiconductor NTP125N60S5H	152 W	125 mOhm	2036 pF	37.3 nC	TO-220-3	-55 °C	150 °C	TO-220-3	22 A	MOSFET (Metal Oxide)	10 V	600 V	30 V	Through Hole	N-Channel	4.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	800	$ 2.18
Newark	Each	500	$ 1.80
ON Semiconductor	N/A	1	$ 1.80

Description

General part information

NTP125N60S5H Series

The SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns. Consequently, the SUPERFET V MOSFET FAST series helps maximize system efficiency and power density.