Specification	H11B1M

Current - DC Forward (If) (Max) [Max]	80 mA
Current - Output / Channel	150 mA
Current Transfer Ratio (Min) [Min]	500 %
Input Type	DC
Mounting Type	Through Hole
Number of Channels	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-40 °C
Output Type	Darlington with Base
Package / Case	6-DIP
Package / Case	0.3 in
Package / Case	7.62 mm
Supplier Device Package	6-DIP
Turn On / Turn Off Time (Typ) [custom]	18 µs
Turn On / Turn Off Time (Typ) [custom]	25 µs
Vce Saturation (Max) [Max]	1 V
Voltage - Isolation	4170 Vrms
Voltage - Output (Max) [Max]	30 V

H11B1M Series

6-Pin DIP Photodarlington Output Optocoupler

Part	Voltage - Isolation	Operating Temperature [Max]	Operating Temperature [Min]	Current - DC Forward (If) (Max) [Max]	Voltage - Output (Max) [Max]	Mounting Type	Vce Saturation (Max) [Max]	Package / Case	Input Type	Current Transfer Ratio (Min) [Min]	Output Type	Turn On / Turn Off Time (Typ) [custom]	Turn On / Turn Off Time (Typ) [custom]	Supplier Device Package	Number of Channels	Current - Output / Channel	Package / Case	Package / Case
ON Semiconductor H11B1SM	4170 Vrms	100 °C	-40 °C	80 mA	30 V	Surface Mount	1 V	6-SMD Gull Wing	DC	500 %	Darlington with Base	18 µs	25 µs	6-SMD	1	150 mA
ON Semiconductor H11B1SR2M	4170 Vrms	100 °C	-40 °C	80 mA	30 V	Surface Mount	1 V	6-SMD Gull Wing	DC	500 %	Darlington with Base	18 µs	25 µs	6-SMD	1	150 mA
ON Semiconductor H11B1M	4170 Vrms	100 °C	-40 °C	80 mA	30 V	Through Hole	1 V	6-DIP	DC	500 %	Darlington with Base	18 µs	25 µs	6-DIP	1	150 mA	0.3 in	7.62 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

Technical documentation and resources