Discrete Semiconductor Products

SQM40020E_GE3

LTB

MOSFET N-CH 40V 100A TO263

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Discrete Semiconductor Products

LTB

MOSFET N-CH 40V 100A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SQM40020E_GE3

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	130 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	8000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	150 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.33 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Grade	FET Type	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package
Vishay General Semiconductor - Diodes Division SQM40020E_GE3	8000 pF	-55 °C	175 ░C	MOSFET (Metal Oxide)	Automotive	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	3.5 V	AEC-Q101	130 nC	Surface Mount	10 V	2.33 mOhm	150 W	100 A	40 V	TO-263 (D2PAK)

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General part information

N-Channel 40 V 100A (Tc) 150W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources