Discrete Semiconductor Products

NTHLD040N65S3HF

Obsolete

ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET® III, FRFET®, 650 V, 65 A, 40 MΩ, TO-247AD

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Search across all available documentation for this part.

DocumentsDatasheet Package Drawing-340AL-TO-247 +1

Discrete Semiconductor Products

NTHLD040N65S3HF

Obsolete

ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET® III, FRFET®, 650 V, 65 A, 40 MΩ, TO-247AD

Deep-Dive with AI

DocumentsDatasheet Package Drawing-340AL-TO-247 +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NTHLD040N65S3HF

Current - Continuous Drain (Id) @ 25°C	65 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	159 nC
Input Capacitance (Ciss) (Max) @ Vds	5945 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	446 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

NTHLD040N65S3HF Series

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 65 A, 40 mΩ, TO-247AD

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTHLD040N65S3HF	446 W	40 mOhm	TO-247-3	-55 °C	150 °C	159 nC	30 V	TO-247-3	650 V	Through Hole	N-Channel	MOSFET (Metal Oxide)	10 V	5 V	5945 pF	65 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NTHLD040N65S3HF Series

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.