Discrete Semiconductor Products

FDN336P-NL

Obsolete

MOSFET P-CH 20V 1.3A SUPERSOT3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 1.3A SUPERSOT3

Technical Specifications

Parameters and characteristics for this part

Specification	FDN336P-NL

Current - Continuous Drain (Id) @ 25°C	1.3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	330 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Supplier Device Package
ON Semiconductor FDN336P-NL	2.5 V 4.5 V	1.5 V	200 mOhm	1.3 A	Surface Mount	-55 °C	150 °C	SC-59 SOT-23-3 TO-236-3	8 V	P-Channel	20 V	330 pF	MOSFET (Metal Oxide)	5 nC	500 mW	SOT-23-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 1.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3

Technical documentation and resources